Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
52mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5.4 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
258 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
U-DFN2020-6 (Type F) |
Package / Case |
6-UDFN Exposed Pad |
Base Product Number |
DMT10 |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMT10H052LFDF-7TR |
Standard Package |
3,000 |
N-Channel 100 V 5A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)