Diodes Incorporated DMT10H9M9LCT

MOSFET BVDSS: 61V~100V TO220AB T

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT10H9M9LCT
Package: Tube
Datasheet: PDF
Stock: 7717
SKU: DMT10H9M9LCT
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.1212

Ext Price: $1.1212

Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2309 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	DMT10
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT10H9M9LCT
Standard Package	50

N-Channel 100 V 101A (Tc) 2.3W (Ta), 156W (Tc) Through Hole TO-220-3