Diodes Incorporated DMT10H9M9SH3

MOSFET BVDSS: 61V~100V TO251 TUB

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT10H9M9SH3
Package: Tube
Datasheet: PDF
Stock: 3994
SKU: DMT10H9M9SH3
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Unit Price: $0.8644

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2085 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak
Base Product Number	DMT10
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT10H9M9SH3
Standard Package	75

N-Channel 100 V 84A (Tc) 114W (Tc) Through Hole TO-251