Diodes Incorporated DMT12H060LCA9-7

MOSFET BVDSS: 101V~250V X4-DSN15

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT12H060LCA9-7
Package: Bulk
Datasheet: -
Stock: 4248
SKU: DMT12H060LCA9-7
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Unit Price: $0.3532

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Details

Parameters
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DSN1515-9
Package / Case	9-SMD, No Lead
Base Product Number	DMT12
Other Names	31-DMT12H060LCA9-7
Standard Package	3,000
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	115 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 5 V
Vgs (Max)	±5.5V
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 50 V
FET Feature	-

N-Channel 115 V 3.5A (Ta) 1.1W (Ta) Surface Mount X2-DSN1515-9