Parameters |
Mfr |
Diodes Incorporated |
Series |
Automotive, AEC-Q101 |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
15.4A (Ta), 49.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
7.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12.1 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
897 pF @ 20 V |
FET Feature |
- |
Power Dissipation (Max) |
2.67W (Ta), 27.1W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount, Wettable Flank |
Supplier Device Package |
PowerDI3333-8 (SWP) Type UX |
Package / Case |
8-PowerVDFN |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMT47M2SFVWQ-13-52 |
Standard Package |
3,000 |
N-Channel 40 V 15.4A (Ta), 49.1A (Tc) 2.67W (Ta), 27.1W (Tc) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX