Diodes Incorporated DMTH10H4M5LPSW

MOSFET BVDSS: 61V~100V POWERDI50

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMTH10H4M5LPSW
Package: Tape & Reel (TR)
Datasheet: -
Stock: 8943
SKU: DMTH10H4M5LPSW
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4843 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	4.7W (Ta), 136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI5060-8 (Type UX)
Package / Case	8-PowerTDFN
Base Product Number	DMTH10
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 100 V 20A (Ta), 107A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)