Diodes Incorporated DMTH47M2LFVWQ-13

MOSFET BVDSS: 31V~40V PowerDI333

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMTH47M2LFVWQ-13
Package: Bulk
Datasheet: PDF
Stock: 3792
SKU: DMTH47M2LFVWQ-13
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Details

Parameters
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	13.6A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	881 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.9W (Ta), 37.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN
Base Product Number	DMTH47
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMTH47M2LFVWQ-13
Standard Package	3,000

N-Channel 40 V 13.6A (Ta), 49A (Tc) 2.9W (Ta), 37.5W (Tc) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX