Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
4 A |
Voltage - Collector Emitter Breakdown (Max) |
100 V |
Vce Saturation (Max) @ Ib, Ic |
260mV @ 400mA, 4A |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
180 @ 500mA, 2V |
Power - Max |
690 mW |
Frequency - Transition |
150MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
3-UDFN Exposed Pad |
Supplier Device Package |
U-DFN2020-3 (Type B) |
Base Product Number |
DXTN58100 |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Other Names |
31-DXTN58100CFDB-7-50 |
Standard Package |
3,000 |
Bipolar (BJT) Transistor NPN 100 V 4 A 150MHz 690 mW Surface Mount U-DFN2020-3 (Type B)