Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Active |
Transistor Type |
NPN - Darlington |
Current - Collector (Ic) (Max) |
800 mA |
Voltage - Collector Emitter Breakdown (Max) |
100 V |
Vce Saturation (Max) @ Ib, Ic |
1.25V @ 8mA, 800mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
10000 @ 500mA, 5V |
Power - Max |
1 W |
Frequency - Transition |
- |
Operating Temperature |
-55°C ~ 200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
E-Line-3, Formed Leads |
Supplier Device Package |
E-Line (TO-92 compatible) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-ZTX614QSTZTB |
Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 1 W Through Hole E-Line (TO-92 compatible)