Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
4 A |
Voltage - Collector Emitter Breakdown (Max) |
100 V |
Vce Saturation (Max) @ Ib, Ic |
200mV @ 400mA, 4A |
Current - Collector Cutoff (Max) |
50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 2A, 2V |
Power - Max |
1.2 W |
Frequency - Transition |
130MHz |
Operating Temperature |
-55°C ~ 200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
E-Line-3, Formed Leads |
Supplier Device Package |
E-Line (TO-92 compatible) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Other Names |
31-ZTX853QSTZTB |
Standard Package |
4,000 |
Bipolar (BJT) Transistor NPN 100 V 4 A 130MHz 1.2 W Through Hole E-Line (TO-92 compatible)