Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
3 A |
Voltage - Collector Emitter Breakdown (Max) |
300 V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 600mA, 3A |
Current - Collector Cutoff (Max) |
50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 500mA, 10V |
Power - Max |
1.2 W |
Frequency - Transition |
80MHz |
Operating Temperature |
-55°C ~ 200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
E-Line-3, Formed Leads |
Supplier Device Package |
E-Line (TO-92 compatible) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Other Names |
31-ZTX857QSTZTB |
Standard Package |
4,000 |
Bipolar (BJT) Transistor NPN 300 V 3 A 80MHz 1.2 W Through Hole E-Line (TO-92 compatible)