| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
450 V |
| Current - Continuous Drain (Id) @ 25°C |
16A |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
- |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220SIS |
| Package / Case |
TO-220-3 Full Pack |
| Base Product Number |
TK16A45 |
| RoHS Status |
RoHS Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
50 |
N-Channel 450 V 16A Through Hole TO-220SIS