Infineon Technologies IPP60R299CPXKSA1

IPP60R299CPXKSA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPP60R299CPXKSA1
Package: Tube
Datasheet: PDF
Stock: 5173
SKU: IPP60R299CPXKSA1
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Unit Price: $3.5900

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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP60R299
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 650 V 11A (Tc) 96W (Tc) Through Hole PG-TO220-3