| Parameters |
| Mfr |
Vishay Siliconix |
| Series |
- |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
1.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
4V, 5V |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 780mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 5 V |
| Vgs (Max) |
±10V |
| Input Capacitance (Ciss) (Max) @ Vds |
490 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.3W (Ta) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
4-HVMDIP |
| Package / Case |
4-DIP (0.300", 7.62mm) |
| Base Product Number |
IRLD120 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
*IRLD120 |
| Standard Package |
2,500 |
N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP