Infineon Technologies IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB120N04S4L02ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: IPB120N04S4L02ATMA1
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Unit Price: $3.4000

Ext Price: $3.4000

Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	14560 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	158W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	IPB120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 40 V 120A (Tc) 158W (Tc) Surface Mount PG-TO263-3