Parameters |
Mfr |
EPC |
Series |
eGaN® |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
170 V |
Current - Continuous Drain (Id) @ 25°C |
24A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
9mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
7.4 nC @ 5 V |
Vgs (Max) |
+6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds |
836 pF @ 85 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Die |
Package / Case |
Die |
Base Product Number |
EPC20 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0040 |
Standard Package |
2,500 |
N-Channel 170 V 24A (Ta) Surface Mount Die