Parameters | |
---|---|
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 101A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 1.8mOhm @ 50A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 14mA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 7-QFN (3x5) |
Package / Case | 7-PowerWQFN |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0040 |
Standard Package | 3,000 |