EPC Space, LLC FBG10N05ASH

GAN FET HEMT 100V 5A 4FSMD-A

Manufacturer: EPC Space, LLC
Manufacturer's number: EPC Space, LLC FBG10N05ASH
Package: Bulk
Datasheet: -
Stock: 25
SKU: FBG10N05ASH
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Unit Price: $408.3100

Ext Price: $408.3100

Details

Parameters
Mfr	EPC Space, LLC
Series	eGaN®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	233 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-SMD
Package / Case	4-SMD, No Lead
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	0000.00.0000
Other Names	4107-FBG10N05ASH
Standard Package	1

N-Channel 100 V 5A (Tc) Surface Mount 4-SMD