Parameters |
Mfr |
EPC Space, LLC |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
26mOhm @ 18A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
6 nC @ 5 V |
Vgs (Max) |
+6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds |
900 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-SMD |
Package / Case |
4-SMD, No Lead |
Moisture Sensitivity Level (MSL) |
Not Applicable |
HTSUS |
0000.00.0000 |
Other Names |
4107-FBG20N18BC |
Standard Package |
154 |
N-Channel 200 V 18A (Tc) Surface Mount 4-SMD