Fairchild Semiconductor FCP165N65S3R0

FCP165N65S3R0 - POWER MOSFET, N-

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FCP165N65S3R0
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: FCP165N65S3R0
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	SuperFET® III
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 440mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	154W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-FCP165N65S3R0
Standard Package	155

N-Channel 650 V 19A (Tc) 154W (Tc) Through Hole TO-220-3