Fairchild Semiconductor FDB33N25TM

POWER FIELD-EFFECT TRANSISTOR, 3

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDB33N25TM
Package: Bulk
Datasheet: PDF
Stock: 1389
SKU: FDB33N25TM
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Power Dissipation (Max)	235W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1
Mfr	Fairchild Semiconductor
Series	UniFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2135 pF @ 25 V
FET Feature	-

N-Channel 250 V 33A (Tc) 235W (Tc) Surface Mount D2PAK (TO-263)