| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
QFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
150 V |
| Current - Continuous Drain (Id) @ 25°C |
3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
9 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
270 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
42W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-MLP (3.3x3.3) |
| Package / Case |
8-PowerWDFN |
| ECCN |
EAR99 |
| HTSUS |
8542.39.0001 |
| Standard Package |
1 |
P-Channel 150 V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3)