Fairchild Semiconductor FDP18N20F

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDP18N20F
Package: Bulk
Datasheet: PDF
Stock: 8646
SKU: FDP18N20F
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1
Mfr	Fairchild Semiconductor
Series	UniFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel

N-Channel 200 V 18A (Tc) 100W (Tc) Through Hole TO-220-3