| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30 V |
| Current - Continuous Drain (Id) @ 25°C |
1.1A |
| Rds On (Max) @ Id, Vgs |
462mOhm @ 300mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
1 nC @ 4.5 V |
| Vgs (Max) |
+5.5V, -300mV |
| Input Capacitance (Ciss) (Max) @ Vds |
85 pF @ 15 V |
| FET Feature |
Schottky Diode (Isolated) |
| Power Dissipation (Max) |
1W (Ta) |
| Operating Temperature |
-55°C ~ 125°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
4-WLCSP (1x1) |
| Package / Case |
4-XFBGA, WLCSP |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
3,000 |
P-Channel 30 V 1.1A 1W (Ta) Surface Mount 4-WLCSP (1x1)