| Parameters |
| Package / Case |
TO-3P-3, SC-65-3 |
| Other Names |
2156-FQA16N50-F109 |
| Standard Package |
1 |
| Mfr |
Fairchild Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
500 V |
| Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
320mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
75 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
3000 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
200W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-3PN |
N-Channel 500 V 16A (Tc) 200W (Tc) Through Hole TO-3PN