Fairchild Semiconductor FQB11P06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQB11P06TM
Package: Bulk
Datasheet: PDF
Stock: 814
SKU: FQB11P06TM
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 53W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

P-Channel 60 V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surface Mount D2PAK (TO-263)