| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
QFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600 V |
| Current - Continuous Drain (Id) @ 25°C |
7.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
1Ohm @ 3.7A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
38 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
1430 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
3.13W (Ta), 142W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D²PAK (TO-263) |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
Vendor Undefined |
| Other Names |
2156-FQB7N60TM-WS-600039 |
| Standard Package |
1 |
N-Channel 600 V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Surface Mount D²PAK (TO-263)