Fairchild Semiconductor FQB8P10TM

POWER FIELD-EFFECT TRANSISTOR, 8

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQB8P10TM
Package: Bulk
Datasheet: PDF
Stock: 4993
SKU: FQB8P10TM
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

P-Channel 100 V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D2PAK (TO-263)