Fairchild Semiconductor FQD13N10TM

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQD13N10TM
Package: Bulk
Datasheet: PDF
Stock: 2886
SKU: FQD13N10TM
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.0000

Ext Price: $1.0000

Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 100 V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252AA