Fairchild Semiconductor FQD5N20LTM

POWER FIELD-EFFECT TRANSISTOR, 3

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQD5N20LTM
Package: Bulk
Datasheet: PDF
Stock: 9319
SKU: FQD5N20LTM
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.3300

Ext Price: $0.3300

Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 37W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	358

N-Channel 200 V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252, (D-Pak)