Fairchild Semiconductor FQI8N60CTU

POWER FIELD-EFFECT TRANSISTOR, 7

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQI8N60CTU
Package: Bulk
Datasheet: PDF
Stock: 6
SKU: FQI8N60CTU
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 147W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	FQI8N60
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 600 V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)