Fairchild Semiconductor FQP32N20C

POWER FIELD-EFFECT TRANSISTOR, 2

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQP32N20C
Package: Bulk
Datasheet: PDF
Stock: 6367
SKU: FQP32N20C
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Details

Parameters
HTSUS	8542.39.0001
Standard Package	1
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
ECCN	EAR99

N-Channel 200 V 28A (Tc) 156W (Tc) Through Hole TO-220-3