Fairchild Semiconductor FQT7N10LTF

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQT7N10LTF
Package: Bulk
Datasheet: PDF
Stock: 8598
SKU: FQT7N10LTF
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 100 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4