Fairchild Semiconductor HUF75631SK8

N-CHANNEL POWER MOSFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor HUF75631SK8
Package: Bulk
Datasheet: PDF
Stock: 4
SKU: HUF75631SK8
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Details

Parameters
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	39mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1225 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1
Mfr	Fairchild Semiconductor
Series	UltraFET®
Package	Bulk
Product Status	Active

N-Channel 100 V 5.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC