Fairchild Semiconductor IRFW620BTM

N-CHANNEL POWER MOSFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor IRFW620BTM
Package: Bulk
Datasheet: PDF
Stock: 933
SKU: IRFW620BTM
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 47W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	800

N-Channel 200 V 5A (Tc) 3.13W (Ta), 47W (Tc) Surface Mount D2PAK (TO-263)