Parameters |
Mfr |
Fairchild Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
30 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 100mA, 1V |
Power - Max |
800 mW |
Frequency - Transition |
130MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
ECCN |
EAR99 |
HTSUS |
8542.39.0001 |
Standard Package |
3,174 |
Bipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92-3