| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
1.2 A |
| Voltage - Collector Emitter Breakdown (Max) |
30 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20000 @ 100mA, 5V |
| Power - Max |
625 mW |
| Frequency - Transition |
125MHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN - Darlington 30 V 1.2 A 125MHz 625 mW Through Hole TO-92-3