Parameters |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
250 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
1.1W (Ta) |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-223-4 |
Package / Case |
TO-261-4, TO-261AA |
ECCN |
EAR99 |
HTSUS |
8542.39.0001 |
Standard Package |
1 |
Mfr |
Fairchild Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
100mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
N-Channel 60 V 4A (Ta) 1.1W (Ta) Surface Mount SOT-223-4