Infineon Technologies IPP65R190E6XKSA1

IPP65R190E6XKSA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPP65R190E6XKSA1
Package: Tube
Datasheet: PDF
Stock: 80
SKU: IPP65R190E6XKSA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $4.2600

Ext Price: $4.2600

Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	151W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP65R190
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3