Infineon Technologies IPD5N25S3430ATMA1

IPD5N25S3430ATMA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD5N25S3430ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: IPD5N25S3430ATMA1
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Unit Price: $1.1400

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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	422 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	41W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD5N25
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 250 V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313