| Parameters |
| Mfr |
GaNPower |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
15A |
| Drive Voltage (Max Rds On, Min Rds On) |
6V |
| Vgs(th) (Max) @ Id |
1.2V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs |
3.3 nC @ 6 V |
| Vgs (Max) |
+7.5V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds |
123 pF @ 400 V |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
Die |
| Package / Case |
Die |
| RoHS Status |
Not applicable |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
Vendor Undefined |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
4025-GPI65015TO |
| Standard Package |
1 |
N-Channel 650 V 15A Surface Mount Die