GeneSiC Semiconductor G2R1000MT17D - GeneSiC Semiconductor FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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GeneSiC Semiconductor G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

  • Manufacturer: GeneSiC Semiconductor
  • Manufacturer's number: GeneSiC Semiconductor G2R1000MT17D
  • Package: Tube
  • Datasheet: PDF
  • Stock: 717
  • SKU: G2R1000MT17D
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $5.4400

Ext Price: $5.4400

Details

Tags

Parameters
Mfr GeneSiC Semiconductor
Series G2R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 111 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number G2R1000
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1242-G2R1000MT17D
Standard Package 30
N-Channel 1700 V 5A (Tc) 44W (Tc) Through Hole TO-247-3