GeneSiC Semiconductor G2R1000MT17J

SIC MOSFET N-CH 3A TO263-7

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor G2R1000MT17J
Package: Tube
Datasheet: PDF
Stock: 14
SKU: G2R1000MT17J
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $6.4400

Ext Price: $6.4400

Details

Parameters
Mfr	GeneSiC Semiconductor
Series	G2R™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	4V @ 2mA
Vgs (Max)	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds	139 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number	G2R1000
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1242-G2R1000MT17J
Standard Package	50

N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7