Parameters |
Mfr |
GeneSiC Semiconductor |
Series |
G2R™ |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
3300 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
1.2Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id |
3.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs |
21 nC @ 20 V |
Vgs (Max) |
+20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
238 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
74W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7 |
Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number |
G2R1000 |
RoHS Status |
RoHS Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
1242-G2R1000MT33J |
Standard Package |
50 |
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7