GeneSiC Semiconductor G2R50MT33K

3300V 50M TO-247-4 SIC MOSFET

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor G2R50MT33K
Package: Tube
Datasheet: PDF
Stock: 78
SKU: G2R50MT33K
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Unit Price: $295.6700

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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	G2R™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	3.5V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	340 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	7301 pF @ 1000 V
FET Feature	Standard
Power Dissipation (Max)	536W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1242-G2R50MT33K
Standard Package	30

N-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4