GeneSiC Semiconductor G3R12MT12K

1200V 12M TO-247-4 G3R SIC MOSFE

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor G3R12MT12K
Package: Tube
Datasheet: PDF
Stock: 8004
SKU: G3R12MT12K
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Unit Price: $69.1800

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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id	2.7V @ 50mA
Gate Charge (Qg) (Max) @ Vgs	288 nC @ 15 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	9335 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	567W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
Base Product Number	G3R12M
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1242-G3R12MT12K
Standard Package	30

N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4