GeneSiC Semiconductor G3R20MT12N

SIC MOSFET N-CH 105A SOT227

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor G3R20MT12N
Package: Tube
Datasheet: PDF
Stock: 1723
SKU: G3R20MT12N
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Unit Price: $56.2000

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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	G3R™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id	2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	219 nC @ 15 V
Vgs (Max)	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds	5873 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	365W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC
Base Product Number	G3R20
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1242-G3R20MT12N
Standard Package	10

N-Channel 1200 V 105A (Tc) 365W (Tc) Chassis Mount SOT-227