GeneSiC Semiconductor G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor G3R350MT12J
Package: Tube
Datasheet: PDF
Stock: 5
SKU: G3R350MT12J
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Unit Price: $5.5100

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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	G3R™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number	G3R350
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1242-G3R350MT12J
Standard Package	50

N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7