Goford Semiconductor G05NP06S2

NP60V, 5A/-3.1A,RD<36M/80M@10V/-

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G05NP06S2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8
SKU: G05NP06S2
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	-
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	5A (Tc), 3.1A (Tc)
Rds On (Max) @ Id, Vgs	40mOhm @ 3.9A, 5V, 95mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1336pF @ 30V, 1454pF @ 30V
Power - Max	2.5W (Tc), 1.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	G05N
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000

Mosfet Array 60V 5A (Tc), 3.1A (Tc) 2.5W (Tc), 1.9W (Tc) Surface Mount 8-SOP