Goford Semiconductor G08N02H

N20V, 12A, RD<11.3M@4.5V,VTH0.5V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G08N02H
Package: Tape & Reel (TR)
Datasheet: -
Stock: 3978
SKU: G08N02H
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	11.3mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Other Names	3141-G08N02HTR
Standard Package	2,500

N-Channel 20 V 12A (Tc) 1.7W (Tc) Surface Mount SOT-223